STFU9N65M2 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP ultra narrow leads package information

Features

Order code VDS RDS(on) max. ID STFU9N65M2 650 V 0.90 Ω 5 A

  • Extremely low gate charge
  • Excellent output capacitance (C OSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STFU9N65M2 Product summary Order code STFU9N65M2 Marking 9N65M2 Package TO-220FP ultra narrow leads Packing Tube N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package STFU9N65M2 Datasheet DS11781 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Current limited by package.
  2. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 4. On/off states

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal Impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP ultra narrow leads package information

Figure 19. TO-220FP ultra narrow leads package outline

Package information

Table 8. TO-220FP ultra narrow leads mechanical data

Revision history

Table 9. Document revision history 04-Aug-2016 1 First release. 08-Sep-2016 2 Document status updated from preliminary to production data. Updated Table 1. Absolute maximum ratings and Table 5. Dynamic. Updated Section 2.1 Electrical characteristics (curves).