Datasheet - STFU14N80K5 - N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Features

Order code VDS RDS(on ) max. ID STFU14N80K5 800 V 0.445 Ω 12 A

  • Industry’s lowest R DS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STFU14N80K5 Product summary Order code STFU14N80K5 Marking 14N80K5 Package TO-220FP ultra narrow leads Packing Tube N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package STFU14N80K5 Datasheet DS12888 - Rev 1 - January 2019 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off-state

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when V DS increases
  2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when V DS increases

Table 6. Switching times Figure 19. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. additional external componentry.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics

3 Test circuits

Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220FP ultra narrow leads package information

Figure 20. TO-220FP ultra narrow leads package outline

Package information

Table 9. TO-220FP ultra narrow leads mechanical data

Revision history

Table 10. Document revision history 10-Jan-2019 1 First release.