STT5NF30L STMICROELECTRONICS | Alldatasheet
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Technical content
N-CHANNEL 30V - 0.039Ω -4 AS O T 2 3 - 6 L STripFET™II POWER MOSFET /square6 TYPICAL R DS (on) = 0.039Ω @10V /square6 LOW Q g /square6 LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man- ufacturing reproducibility.
APPLICATIONS
/square6 DC-DC CONVERTERS /square6 POWER MANAGEMENT IN PORTABLE/ DESKTOP PCs /square6 SYNCHRONOUS RECTIFICATION /square6 DC MOTOR CONTROL (DISK DRIVERS, etc)
ORDERING INFORMATION
TYPE V DSS R DS(on) ID STT5NF30L 30 V < 0.050 Ω (@ 10V) 4 A SALES TYPE MARKING PACKAGE PACKAGING STT5NF30L STFN SOT23-6L TAPE & REEL SOT23-6L INTERNAL SCHEMATIC DIAGRAM
(•)Pulse width limited by safe operating area (1) Starting Tj=25°C,Id =2A ,V DD =1 5 V. THERMAL DATA ON/OFF Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0 ) 30 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 30 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 4A ID Drain Current (continuous) at TC = 100°C 2.5 A IDM (/circle6 ) Drain Current (pulsed) 16 A PTOT Total Dissipation at TC = 25°C 1.6 W EAS (1) Single Pulse Avalanche Energy 50 mJ Rthj-amb Thermal Resistance Junction-ambient Max 78 °C/W Tl Max. Operating Junction Temperature - 55 to 150 °C Tstg Storage Temperature - 55 to 150 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125°C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 16V ±100 µA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250 µA 1 V R DS(on) Static Drain-source On Resistance VGS =1 0V ,ID =2A VGS =5V ,ID =2A 0.039 0.046 0.050 0.060 Ω Ω
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =1 0V ,ID =2A 3 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V ,f=1M H z ,VGS = 0 330 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time VDD =1 5V ,ID =2A R G = 4.7Ω VGS =4 . 5V (see test circuit, Figure 3) 100 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =2 4V ,ID =4A , VGS =5V 6.5 3.6 9n C nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-Off Delay Time Fall Time VDD =1 5V ,ID =2A , R G =4 . 7Ω, VGS = 4.5 V (see test circuit, Figure 5) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 4 A, VGS =0 1.2 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100 A/µs, VDD =2 0V ,Tj= 150°C (see test circuit, Figure 5) ns nC A
Thermal Impedence Junction-PCBSafe Operating Area Output Characteristics Static Drain-source On Resistance Transfer Characteristics Transconductance
Source-drain Diode Forward Characteristics Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Gate Charge vs Gate-source Voltage Capacitance Variations
Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load
DIM. mm mils A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 AA 2 A1 b e c E L D SOT23-6L MECHANICAL DATA
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