STF15N65M5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 17

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested

Applications

■ Switching applications

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature.

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
  2. Energy related is defined as a constant equival ent capacitance giving the same stored energy as C oss

Table 7. Switching times Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs

0.35 VGS=10V

2.1 VGS= 10 V

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 9. TO-220FP mechanical data

Figure 23. TO-220FP drawing

Figure 24. I 2PAKFP (TO-281) drawing Table 10. I 2PAKFP (TO-281) mechanical data

Table 11. TO-220 type A mechanical data

Figure 25. TO-220 type A drawing

5 Revision history

Table 12. Document revision history 05-Mar-2012 1 First release. – Added Section 2.1: Electrical characteristics (curves).