Datasheet - STFH10N60M2 - N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics curves
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP wide creepage package information
Features
Order code VDS at TJmax. RDS(on) max. ID STFH10N60M2 650 V 0.60 Ω 7.5 A
- Extremely low gate charge
- Excellent output capacitance (C OSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
Applications
- Switching applications
- LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. Product status link STFH10N60M2 Product summary Order code STFH10N60M2 Marking 10N60M2 Package TO-220FP wide creepage Packing Tube N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package STFH10N60M2 Datasheet DS11690 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
- Pulse width limited by T jmax.
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 4. Static
- Defined by design, not subject to production test.
Table 5. Dynamic Figure 15. Test circuit for gate charge behavior
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 14. Test circuit for resistive load switching times
Electrical characteristics
Table 7. Source-drain diode Figure 16. Test circuit for inductive load switching and
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics curves
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage
0 Q g (nC)
Figure 6. Static drain-source on-resistance
2 ID (A)1 3
Figure 7. Capacitance variations Figure 8. Normalized gate threshold voltage vs Figure 9. Normalized on-resistance vs temperature Figure 10. Source-drain diode forward characteristics Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Output capacitance stored energy
0 V DS (V)
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP wide creepage package information
Figure 19. TO-220FP wide creepage package outline
Package information
Table 8. TO-220FP wide creepage package mechanical data
Revision history
Table 9. Document revision history 07-Jun-2016 1 First release. Document status promoted from preliminary data to production data. Modified features on cover page. Modified Table 1 and Table 3. Updated Figure 1 and Figure 2.