STF92 STMICROELECTRONICS | Alldatasheet
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Technical content
SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA ■ SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR ■ MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS STF42
APPLICATIONS
■ VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) ■ TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) INTERNAL SCHEMATIC DIAGRAM May 2002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -300 V V CEO Collector-Emitter Voltage (IB = 0) -300 V V EBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.1 A ICM Collector Peak Current -0.2 A P tot Total Dissipation at TC = 25 oC 1.3 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC Type Marking STF92 692 SOT-89
R thj-amb • Thermal Resistance Junction-Ambient Max 96.1 oC/W
- Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = -200 V V CB = -200 V TC = 150 oC V CB = -300 V -10 -10 -100 nA µ A µ A IEBO Emitter Cut-off Current (IC = 0) V EB = -5 V -50 nA V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100 µ A -300 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA -300 V V (BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100 µA -5 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -0.6 V V BE(sat)∗ Base-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -1.2 V hFE ∗ DC Current Gain I C = -30 mA VCE = -10 V 75 fT Transition Frequency I C = -15mA VCE = -10V f = 20 MHz 60 MHz C CBO Collector-Base Capacitance IE = 0 VCB = -10 V f = 1 MHz 6 pF C EBO Emitter-Base Capacitance IC = 0 VEB = -2 V f = 1 MHz 22 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % STF92
DIM. mm mils A 1.4 1.6 55.1 63.0 B 0.44 0.56 17.3 22.0 B1 0.36 0.48 14.2 18.9 C 0.35 0.44 13.8 17.3 C1 0.35 0.44 13.8 17.3 D 4.4 4.6 173.2 181.1 D1 1.62 1.83 63.8 72.0 E 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61.8 e1 2.92 3.07 115.0 120.9 H 3.94 4.25 155.1 167.3 L 0.89 1.2 35.0 47.2 P025H SOT-89 MECHANICAL DATA STF92
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com STF92