Datasheet - STF8NM50N - N‑channel 500 V, 730 mΩ typ., 5 A MDmesh II Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 11
Technical content
Features
Order code VDS RDS(on) max. ID STF8NM50N 500 V 790 mΩ 5 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 AM01475v1_noTAB D(2) G(1) S(3) Product status link STF8NM50N Product summary Order code STF8NM50N Marking 8NM50N Package TO-220FP Packing Tube N‑channel 500 V, 730 mΩ typ., 5 A MDmesh II Power MOSFET in a TO-220FP package STF8NM50N Datasheet DS8758 - Rev 3 - April 2026 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
2.1 Electrical characteristics curves
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characterisics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 18. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data
Revision history
Table 9. Document revision history 17-Nov-2011 1 First release. 18-Nov-2011 2 Updated dv/dt in Table 2: Absolute maximum ratings. Updated Section 4.1: TO-220FP type B package information.
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