Datasheet - STF8NK100Z, STP8NK100Z - N‑channel 1000 V, 1.45 Ω typ., 6.5 A SuperMESH Power MOSFET in a TO-220FP and TO-220 packages

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 15

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics curves
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information
  • 4.2 TO-220 type A package information

Features

Order code VDS RDS(on) max. ID STF8NK100Z 1000 V 1.85 Ω 6.5 A STP8NK100Z

  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected

Applications

  • Switching applications

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on‑resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. 1 2 TO-220FP TO-220 TAB D(2, TAB) G(1) S(3) NG1D2TS3Z Product status links STF8NK100Z STP8NK100Z Product summary Order code STF8NK100Z Marking F8NK100Z Package TO-220FP Packing Tube Order code STP8NK100Z Marking P8NK100Z Package TO-220 Packing Tube N‑channel 1000 V, 1.45 Ω typ., 6.5 A SuperMESH Power MOSFET in a TO-220FP and TO-220 packages STF8NK100Z, STP8NK100Z Datasheet DS4482 - Rev 2 - March 2026 For further information, contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off states

  1. Specified by design, not tested in production.

Table 5. Dynamic

  1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from
  2. Specified by design, not tested in production.

Table 6. Switching times Figure 20. Switching time waveform)

Electrical characteristics

Table 7. Source drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics curves

Figure 1. Safe operating area for TO-220 Figure 2. Normalized transient thermal impedance Figure 3. Safe operating area for TO-220FP Figure 4. Normalized transient thermal impedance Figure 5. Typical output characterisics Figure 6. Typical transfer characteristics

3 Test circuits

Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior Figure 17. Test circuit for inductive load switching and Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

4 Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 21. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

4.2 TO-220 type A package information

Figure 22. TO-220 type A package outline

Table 9. TO-220 type A package mechanical data

Revision history

Table 10. Document revision history 04-Nov-2005 1 First release. Updated Section 4: Package information.

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