STF817 STMICROELECTRONICS | Alldatasheet

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Technical content

PNP MEDIUM POWER TRANSISTORS ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING

APPLICATIONS

■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. INTERNAL SCHEMATIC DIAGRAM April 2002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Devices STN817 STF817 Packages SOT-223 SOT-89 V CBO Collector-Base Voltage (IE = 0) -120 V V CEO Collector-Emitter Voltage (IB = 0) -80 V V EBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -1.5 A ICM Collector Peak Current (tp < 5 ms) -2 A IB Base Current -0.3 A IBM Base Peak Current (tp < 5 ms) -0.6 A P tot Total Dissipation at Tc = 25 oC 1.6 1.4 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC SOT-223 SOT-89 Type Marking STF817 817 STN817 N817

R thj-amb • Thermal Resistance Junction-ambient Max 78 89 oC/W

  • Device mounted on a PCB area of 1 cm2. ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) V CE = -120 V -500 µ A ICEO Collector Cut-off Current (IB = 0) V CE = -80 V -1 mA IEBO Emitter Cut-off Current (IC = 0) V EB = -5 V -100 µ A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = -10 mA -80 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = -100 mA IB = -10 mA IC = -1 A IB = -100 mA -0.25 -0.5 V V V BE(sat)∗ Base-Emitter Saturation Voltage IC = -100 mA IB = -10 mA IC = -1 A IB = -100 mA -1.1 V V hFE ∗ DC Current Gain I C = -100 mA VCE = -2 V IC = -500 mA VCE = -2 V IC = -1 A VCE = -2 V 140 fT Transition Frequency I C = -0.1 A VCE = -10 V 50 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % STF817 - STN817

DIM. mm inch A 1.80 0.071 e 2.30 0.090 e1 4.60 0.181 V1 0 o 10o A1 0.02 P008B SOT-223 MECHANICAL DATA STF817 - STN817

DIM. mm mils A 1.4 1.6 55.1 63.0 B 0.44 0.56 17.3 22.0 B1 0.36 0.48 14.2 18.9 C 0.35 0.44 13.8 17.3 C1 0.35 0.44 13.8 17.3 D 4.4 4.6 173.2 181.1 D1 1.62 1.83 63.8 72.0 E 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61.8 e1 2.92 3.07 115.0 120.9 H 3.94 4.25 155.1 167.3 L 0.89 1.2 35.0 47.2 P025H SOT-89 MECHANICAL DATA STF817 - STN817

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com STF817 - STN817