Datasheet - STF7NM80 - N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information

Features

Order code VDS RDS(on) max. ID STF7NM80 800 V 1.05 Ω 6.5 A

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

  • Switching applications

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market. TO-220FP 1 2 3 AM01475v1_noZen_noTab D(2) G(1) S(3) Product status link STF7NM80 Product summary Order code STF7NM80 Marking F7NM80 Package TO-220FP Packing Tube N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a TO-220FP package STF7NM80 Datasheet DS14326 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. This value is limited by maximum junction temperature.
  2. Pulse width is limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off states

  1. Specified by design, not tested in production.

Table 5. Dynamic Table 6. Switching times Figure 17. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Static drain-source on-resistance Figure 6. Gate charge vs gate-source voltage

3 Test circuits

Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 18. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

Revision history

Table 9. Document revision history 30-May-2023 1 First release. The part number STF7NM80 was previously inserted in the DS4854.

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