Datasheet - STF7NM60N - N-channel 600 V, 800 mΩ typ., 5 A MDmesh II Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information

Features

Order code VDS RDS(on) max. ID STF7NM60N 600 V 900 mΩ 5 A

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

  • Switching applications

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 AM01475v1_noZen_noTab D(2) G(1) S(3) Product status link STF7NM60N Product summary Order code STF7NM60N Marking 7NM60N Package TO-220FP Packing Tube N-channel 600 V, 800 mΩ typ., 5 A MDmesh II Power MOSFET in a TO-220FP package STF7NM60N Datasheet DS14486 - Rev 1 - October 2023 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. This value is limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.
  3. ISD ≤ 5 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80%V(BR)DSS.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off states

  1. Specified by design, not tested in production.

Table 5. Dynamic

  1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 16. Switching time waveform)

Electrical characteristics

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior Figure 13. Test circuit for inductive load switching and Figure 14. Unclamped inductive load test circuit Figure 15. Unclamped inductive waveform Figure 16. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 17. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

Revision history

Table 9. Document revision history 18-Oct-2023 1 First release. The part number STF7NM60N previously included in datasheet DS6523.

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