Datasheet - STF7N95K3, STP7N95K3, STW7N95K3 - N-channel 950 V, 1.1 Ω typ., 7.2 A MDmesh K3 Power MOSFET in a TO-220FP, TO-220 and TO-247 packages
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 18
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
- 4.2 TO-220 type A package information
- 4.3 TO-247 package information
- 5 Ordering information
Features
Order codes VDS RDS(on) max. ID STF7N95K3 950 V 1.35 Ω 7.2 ASTP7N95K3 STW7N95K3
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. TO-247 1 2 3 TAB TO-220 TO-220FP 1 2 2 3 D(2, TAB) G(1) S(3) AM01476v1_tab Product status link STF7N95K3 STP7N95K3 STW7N95K3 N-channel 950 V, 1.1 Ω typ., 7.2 A MDmesh K3 Power MOSFET in a TO-220FP, TO-220 and TO-247 packages STF7N95K3, STP7N95K3, STW7N95K3 Datasheet DS6077 - Rev 2 - January 2026 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. Static
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times Figure 23. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220FP Figure 2. Normalized transient thermal impedance Figure 3. Safe operating area for TO-220 Figure 4. Normalized transient thermal impedance Figure 5. Safe operating area for TO-247 Figure 6. Normalized transient thermal impedance
Figure 7. Typical output characteristics Figure 8. Typical transfer characteristics
9 V DS =15V
Figure 9. Typical gate charge characteristics Figure 10. Typical drain-source on-resistance Figure 11. Typical capacitance characteristics Figure 12. Typical output capacitance stored energy
0 V DS (V)
3 Test circuits
Figure 18. Test circuit for resistive load switching times Figure 19. Test circuit for gate charge behavior Figure 20. Test circuit for inductive load switching and Figure 21. Unclamped inductive load test circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 24. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data
4.2 TO-220 type A package information
Figure 25. TO-220 type A package outline
Table 9. TO-220 type A package mechanical data
4.3 TO-247 package information
Figure 26. TO-247 package outline
Table 10. TO-247 package mechanical data
5 Ordering information
Table 11. Order codes
Ordering information
Revision history
Table 12. Document revision history 27-Jan-2009 1 First release. Updated Section 4: Package information.
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