Datasheet - STF7N90K5 - N-channel 900 V, 720 mΩ typ., 7 A, MDmesh K5 Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information

Features

Order code VDS RDS(on ) max. ID STF7N90K5 900 V 810 mΩ 7 A

  • Ultra-low gate charge
  • Very low FoM (figure of merit)
  • Zener-protected
  • 100% avalanche tested

Applications

  • Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220FP 1 2 3 D(2) G(1) S(3) AM01476v1_No_tab Product status STF7N90K5 Product summary Order code STF7N90K5 Marking 7N90K5 Package TO-220FP Packing Tube N-channel 900 V, 720 mΩ typ., 7 A, MDmesh K5 Power MOSFET in a TO-220FP package STF7N90K5 Datasheet DS11868 - Rev 3 - April 2026 For further information, contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 4. On-/off-state

  1. Specified by design, not tested in production.

Table 5. Dynamic

  1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
  2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

Table 6. Switching times Figure 18. Switching time

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 19. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

Revision history

Table 9. Document revision history 11-Oct-2016 1 First release. Updated Figure 5. Gate charge vs gate-source voltage. Updated Section 4.1 TO-220FP package information. Updated Section 4.1: TO-220FP type B package information.

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