STF7N65M6 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP package information

Features

Order code VDS RDS(on) max. ID STF7N65M6 650 V 0.99 Ω 5 A

  • Reduced switching losses
  • Lower R DS(on) per area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STF7N65M6 Product summary Order code STF7N65M6 Marking 7N65M6 Package TO-220FP Packing Tube N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET in a TO‑220FP package STF7N65M6 Datasheet DS11822 - Rev 2 - October 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 4. On/off state

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STF7N65M6

Package information

4.1 TO-220FP package information

Figure 19. TO-220FP package outline

Table 8. TO-220FP package mechanical data

Revision history

Table 9. Document revision history 15-Sep-2016 1 Initial release. Updated Figure 14. Test circuit for gate charge behavior.