N-channel 650 V, 0.96 typ., 5 A MDmesh™ M2 Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 AM15572v1 Order code V DS RDS(on) max ID STF7N65M2 650 V 1.15 Ω 5 A Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS

Table 7. Switching times

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics

04 VGS(V)8

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs Figure 12. Source-drain diode forward Figure 13. Normalized V(BR)DSS vs temperature

2 ISD(A)

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 20. TO-220FP drawing

Table 9. TO-220FP mechanical data

5 Revision history

Table 10. Document revision history 29-Jul-2014 1 First release. Added Section 2.1: Electrical characteristics (curves).