N-channel 650 V, 1.2 typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 18

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 4.1 TO-220FP , STF6N65M2
  • 4.2 TO-220, STP6N65M2
  • 4.3 IPAK, STU6N65M2
  • 5 Revision history

Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. TO-220TO-220FP IPAK 1 2 TAB TAB AM15572v1 , TAB Order codes V DS RDS(on) max I D STF6N65M2 650 V 1.35 Ω 4 ASTP6N65M2 STU6N65M2 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capac itance giving the same charging time as C oss when VDS

Table 7. Switching times

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 and Figure 5. Thermal impedance for TO-220 and Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 14. Source-drain diode forward

3 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220FP , STF6N65M2

Figure 21. TO-220FP drawing

Table 9. TO-220FP mechanical data

4.2 TO-220, STP6N65M2

Figure 22. TO-220 type A drawing

Table 10. TO-220 type A mechanical data

4.3 IPAK, STU6N65M2

Figure 23. IPAK (TO-251) drawing

Table 11. IPAK (TO-251) mechanical data

5 Revision history

Table 12. Document revision history 04-Aug-2014 1 First release.