Datasheet - STF6N65K3 - N‑channel 650 V, 1.1 Ω typ., 5.4 A MDmesh K3 Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF6N65K3 650 V 1.3 Ω 5.4 A
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. TO-220FP 1 2 3 D(2) G(1) S(3) AM01476v1 Product status link STF6N65K3 Product summary Order code STF6N65K3 Marking 6N65K3 Package TO-220FP Packing Tube N‑channel 650 V, 1.1 Ω typ., 5.4 A MDmesh K3 Power MOSFET in a TO-220FP package STF6N65K3 Datasheet DS7091 - Rev 3 - March 2026 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. Static
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 V to the stated
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 V to the stated
Table 6. Switching times Figure 19. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics
0 Q g (nC)
Figure 6. Typical drain-source on-resistance
Figure 13. Typical reverse diode forward characteristics
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 20. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data
Revision history
Table 9. Document revision history 05-Apr-2011 1 First release. Section 2.1: Electrical characteristics (curves) has been updated. Removed order code STFI6N65K3 and STU6N65K3. Updated Section 4: Package information.
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