Datasheet - STF6N62K3 - N-channel 620 V, 0.95 Ω typ., 5.5 A MDmesh K3 Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF6N62K3 620 V 1.2 Ω 5.5 A
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF6N62K3 Product summary Order code STF6N62K3 Marking 6N62K3 Package TO-220FP Packing Tube N-channel 620 V, 0.95 Ω typ., 5.5 A MDmesh K3 Power MOSFET in a TO-220FP package STF6N62K3 Datasheet DS14472 - Rev 1 - October 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
Table 4. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 5. Thermal data Table 6. Avalanche characteristics
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics
0 Q g (nC)
Figure 6. Typical capacitance characteristics
Figure 13. Maximum avalanche energy vs temperature
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 20. TO-220FP type B package outline
Package information
Table 7. TO-220FP type B package mechanical data
Revision history
Table 8. Document revision history
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