STF6N60DM2 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP package information
Features
Order code VDS RDS(on) max. ID PTOT STF6N60DM2 600 V 1.10 Ω 5 A 20 W
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STF6N60DM2 Product summary Order code STF6N60DM2 Marking 6N60DM2 Package TO-220FP Packing Tube N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package STF6N60DM2 Datasheet DS12220 - Rev 3 - March 2020 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
- Pulse width limited by T jmax.
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 4. Static
- Defined by design, not subject to production test.
Table 5. Dynamic
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP package information
Figure 19. TO-220FP package outline
Package information
Table 8. TO-220FP package mechanical data
Revision history
Table 9. Document revision history 16-Mar-2020 3 Updated Section Features. Minor text change to improve the readability.