Datasheet - STF5N95K3 - N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
- 4.2 TO-220FP type C package information
Features
Order code VDS RDS(on) max. ID STF5N95K3 950 V 3.5 Ω 4 A
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF5N95K3 Product summary Order code STF5N95K3 Marking 5N95K3 Package TO-220FP Packing Tube N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a TO-220FP package STF5N95K3 Datasheet DS14291 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 3. On/off states
- Specified by design, not tested in production.
Table 4. Dynamic
- C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 5. Switching times Figure 19. Switching time waveform)
Electrical characteristics
Table 6. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
0.5 ID (A)
Figure 7. Typical capacitance characteristics Figure 8. Typical output capacitance stored energy Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature
3.0 V GS =10 V
Figure 11. Normalized breakdown voltage vs temperature Figure 12. Typical reverse diode forward characteristics
Figure 13. Maximum avalanche energy vs temperature
100 ID =4 A
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 20. TO-220FP type B package outline
Package information
Table 7. TO-220FP type B package mechanical data
4.2 TO-220FP type C package information
Figure 21. TO-220FP type C package outline
Table 8. TO-220FP type C package mechanical data
Revision history
Table 9. Document revision history
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