STF5N65M6 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID STF5N65M6 650 V 1.3 Ω 4 A Reduced switching losses Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected
Applications
Switching applications
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packing STF5N65M6 5N65M6 TO-220FP Tube TO-220FP AM15572v1_no_tab D(2) G(1) S(3)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 4 A ID Drain current (continuous) at TC = 100 °C 2.5 A IDM(1) Drain current (pulsed) 16 A PTOT Total dissipation at TC = 25 °C 20 W dv/dt(2) Peak diode recovery voltage slope 5 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV TJ Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 4 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V (3)VDS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 6.25 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1 A Eas Single pulse avalanche energy (starting Tj=25°C, ID= IAR, VDD=50 V) 90 mJ
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS= 0, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V 1 µA VGS = 0 V, VDS = 650 V; TC = 125 °C (1) 100 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.25 3 3.75 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2 A 1.15 1.3 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 170 - pF Coss Output capacitance - 20 - pF Crss Reverse transfer capacitance - 1 - pF Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 35 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 5 - Ω Qg Total gate charge VDD = 350 V, ID = 1 A, VGS= 10 V, (see Figure 15: "Test circuit for gate charge behavior") - 5.1 - nC Qgs Gate-source charge - 0.8 - nC Qgd Gate-drain charge - 2 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 325 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 6.5 - ns tr Rise time - 5.9 - ns td(off) Turn-off delay time - 17.4 - ns tf Fall time - 15.2 - ns
Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 4 A ISDM(1) Source-drain current (pulsed) 16 A VSD(2) Forward on voltage ISD = 4 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, (see Figure 19: "Switching time waveform") - 222 ns Qrr Reverse recovery charge - 1.24 µC IRRM Reverse recovery current - 11.2 A trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 19: "Switching time waveform") - 264 ns Qrr Reverse recovery charge - 1.39 µC IRRM Reverse recovery current - 10.5 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
3 Test circuits
Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP package information
Figure 20: TO-220FP package outline
Table 9: TO-220FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
5 Revision history
Table 10: Document revision history Date Revision Changes 05-May-2016 1 Initial release.