STF5N60M2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP package information
- 5 Revision history
Features
Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube TO-220FP
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID(1) Drain current (continuous) at TC = 25 °C 3.5 A Drain current (continuous) at TC = 100 °C 2.2 IDM(2) Drain current (pulsed) 14 A PTOT Total dissipation at TC = 25 °C 20 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1)Limited by package. (2) Pulse width limited by safe operating area. (3) ISD ≤ 3.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (4) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 6.25 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 0.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 80 mJ
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V µA VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1.7 A 1.3 1.4 Ω Notes: (1) Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 211 - pF Coss Output capacitance - 13 - Crss Reverse transfer capacitance - 0.75 - Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 19.5 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.2 - Ω Qg Total gate charge VDD = 480 V, ID = 3.5 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 8 - nC Qgs Gate-source charge - 1.6 - Qgd Gate-drain charge - 4.4 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 1.7 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 12 - ns tr Rise time - 3 - td(off) Turn-off delay time - 70 - tf Fall time - 15 -
Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 3.5 A ISDM(1) Source-drain current (pulsed) 14 A VSD(2) Forward on voltage VGS = 0 V, ISD = 3.5 A - 1.6 V trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 220 ns Qrr Reverse recovery charge - 1.05 µC IRRM Reverse recovery current - 9.5 A trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 314 ns Qrr Reverse recovery charge - 1.5 µC IRRM Reverse recovery current - 9.5 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5 %.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
3 Test circuits
Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP package information
Figure 20: TO-220FP package outline
Table 9: TO-220FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
5 Revision history
Table 10: Document revision history Date Revision Changes 30-Sep-2013 1 First release. 15-Jun-2016 2 Updated title, features and description in cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)". Minor text changes.