Datasheet - STF5N105K5 - N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF5N105K5 1050 V 3.5 Ω 3 A
- Ultra-low gate charge
- Very low FoM (figure of merit)
- Zener-protected
- 100% avalanche tested
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF5N105K5 Product summary Order code STF5N105K5 Marking 5N105K5 Package TO-220FP Packing Tube N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package STF5N105K5 Datasheet DS10484 - Rev 6 - May 2026 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. Static
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times Figure 19. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
Figure 13. Typical output capacitance stored energy
0 V DS (V)
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 20. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data DS10484 - Rev 6 page 10/13
Revision history
Table 9. Document revision history 17-Jul-2014 1 First release. Document status promoted from preliminary to production data. Inserted Section 3.1: "Electrical characteristics (curves)". 02-Sep-2014 3 Updated title in cover page. Updated Section 4: Package information.
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