Datasheet - STF46N60M6 - N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP package information

Features

Order code VDS RDS(on) max. ID STF46N60M6 600 V 80 mΩ 36 A

  • Reduced switching losses
  • Lower R DS(on) per area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications
  • LLC converters
  • Boost PFC converters

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STF46N60M6 Product summary Order code STF46N60M6 Marking 46N60M6 Package TO-220FP Packing Tube N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package STF46N60M6 Datasheet DS13019 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified) Table 4. On/off states

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time

Electrical characteristics

Table 7. Source-drain diode

  1. Limited by maximum junction temperature.
  2. Pulse width is limited by safe operating area.
  3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP package information

Figure 19. TO-220FP package outline

Package information

Table 8. TO-220FP package mechanical data

Revision history

Table 9. Document revision history 10-May-2019 1 Initial release. 2.1 Electrical characteristics (curves).