STF40NF06 STMICROELECTRONICS | Alldatasheet

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Table 3: Absolute Maximum ratings (1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. . (2) Starting Tj=25°C, ID =20A, VDD =30V (/circle6 ) Pulse width limited by safe operating area Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Table 6: On Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 23 A ID Drain Current (continuous) at TC = 100°C 16 A IDM (/circle6 ) Drain Current (pulsed) 92 A PTOT Total Dissipation at TC = 25°C 30 W Derating Factor 0.2 W/ °C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS (2) Single Pulse Avalanche Energy 250 mJ VISO Insulation Withstand Voltage (DC) 2500 V Tstg Storage Temperature –55 to 175 °C Tj Operating Junction Temperature Rthj-case Thermal Resistance Junction-case Max 5.0 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125°C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold VoltageVDS = VGS , ID = 250µA 24 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 11.5 A 0.024 0.028 Ω

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Switching On Table 9: Switching Off Table 10: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS = 30 V ID =11.5A 12 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 920 225 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30V, ID = 20A R G =4 . 7Ω VGS = 10V (see Figure 16) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48V, ID = 10A, VGS = 10V 6.5 43 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30V, ID = 20A, R G =4.7Ω, VGS = 10V (see Figure 16) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 23 A ISDM (2) Source-drain Current (pulsed) 92 A VSD (1) Forward On Voltage ISD = 23A, VGS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40A, di/dt = 100A/µs, VDD = 10V, Tj = 150°C (see test circuit, Figure 5) 150 4.8 ns nC A

A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

Table 11: Revision History Date Revision Description of Changes 07-Oct-2004 1 First release 11-Nov-2004 2 Final datasheet

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