Datasheet - STF40N60M2, STFW40N60M2 - N‑channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-220FP and TO-3PF packages
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
- 4.2 TO-3PF type A package information
Features
Order code VDS RDS(on) max. ID STF40N60M2
600 V 88 mΩ 34 A
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. TO-220FP 1 1 1 TO-3PF D(2) G(1) S(3) AM01476v1 Product status links STF40N60M2 STFW40N60M2 Product summary Order code STF40N60M2 Marking 40N60M2 Package TO-220FP Packing Tube Order code STFW40N60M2 Marking 40N60M2 Package TO-3PF Packing Tube N‑channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-220FP and TO-3PF packages STF40N60M2, STFW40N60M2 Datasheet DS10342 - Rev 3 - December 2025 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 20. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220FP Figure 2. Normalized transient thermal impedance Figure 3. Safe operating area for TO-3PF Figure 4. Normalized transient thermal impedance Figure 5. Typical output characteristics Figure 6. Typical transfer characteristics
Figure 13. Normalized breakdown voltage vs temperature Figure 14. Typical reverse diode forward characteristics
0 ISD (A)
1.0 TJ= -50°C
3 Test circuits
Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior Figure 17. Test circuit for inductive load switching and Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 21. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data DS10342 - Rev 3 page 10/15
4.2 TO-3PF type A package information
Figure 22. TO-3PF type A package outline DS10342 - Rev 3 page 11/15
Table 9. TO-3PF type A mechanical data DS10342 - Rev 3 page 12/15
Revision history
Table 10. Document revision history Updated title in cover page. Table 8: Source drain diode. Removed order code STFI40N60M2. Updated Section 4: Package information.
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