Datasheet - STF3NK80Z - N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF3NK80Z 800 V 4.5 Ω 2.5 A
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Zener-protected
Applications
- Switching applications
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well- established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF3NK80Z Product summary Order code STF3NK80Z Marking F3NK80Z Package TO-220FP Packing Tube N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package STF3NK80Z Datasheet DS14366 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- This value is limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On /off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source drain diode
- This value is limited by maximum junction temperature.
- Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
- Pulse width is limited by safe operating area.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on-resistance Figure 6. Gate charge vs gate-source voltage
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 19. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data
Revision history
Table 9. Document revision history 27-Jun-2023 1 First release. The part number STF3NK80Z was previously inserted in the DS3337.
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