Datasheet - STF3N80K5 - N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh K5 Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF3N80K5 800 V 3.5 Ω 2.5 A
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF3N80K5 Product summary Order code STF3N80K5 Marking 3N80K5 Package TO-220FP Packing Tube N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh K5 Power MOSFET in a TO-220FP package STF3N80K5 Datasheet DS14538 - Rev 1 - December 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off-state
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
Figure 7. Typical capacitance characteristics Figure 8. Output capacitance stored energy
0 VDS(V)
Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized breakdown voltage vs temperature Figure 12. Typical reverse diode forward characteristics
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 19. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data
Revision history
Table 9. Document revision history
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