STF36N60M6 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
Features
Order code VDS RDS(on) max. ID STF36N60M6 600 V 99 mΩ 30 A
- Reduced switching losses
- Lower R DS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
- LLC converters
- Boost PFC converters
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.Product status link STF36N60M6 Device summary Order code STF36N60M6 Marking 36N60M6 Package TO-220FP Packing Tube N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220FP package STF36N60M6 Datasheet DS12609 - Rev 1 - July 2018 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4. On/off states
- Defined by design, not subject to production test.
Table 5. Dynamic
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time waveform) Table 7. Source-drain diode
Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit ISDM(1) Source-drain current (pulsed) - 102 A VSD (2) Forward on voltage VGS = 0 V, ISD = 30 A - 1.6 V trr Reverse recovery time ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 340 ns Qrr Reverse recovery charge - 5.3 µC IRRM Reverse recovery current - 31 A trr Reverse recovery time ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 430 ns Qrr Reverse recovery charge - 7.7 µC IRRM Reverse recovery current - 36 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 μs, duty cycle 1.5%. STF36N60M6
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STF36N60M6
Package information
4.1 TO-220 type A package information
Figure 19. TO-220FP package outline
Table 8. TO-220FP package mechanical data
Revision history
Table 9. Document revision history 02-Jul-2018 1 First release.