Datasheet - STF35N60DM2 - N‑channel 600 V, 94 mΩ typ., 28 A MDmesh DM2 Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information

Features

Order code VDS RDS(on) max. ID STF35N60DM2 600 V 110 mΩ 28 A

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

  • Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast‑recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high‑efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. TO-220FP 1 2 3 D(2) G(1) S(3) AM01476v1 Product status link STF35N60DM2 Product summary Order code STF35N60DM2 Marking 35N60DM2 Package TO-220FP Packing Tube N‑channel 600 V, 94 mΩ typ., 28 A MDmesh DM2 Power MOSFET in a TO-220FP package STF35N60DM2 Datasheet DS11270 - Rev 2 - April 2026 For further information, contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 4. On/off states

  1. Specified by design, not tested in production.

Table 5. Dynamic

  1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 19. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

Revision history

Table 9. Document revision history 15-Sep-2015 1 First release. Updated Section 4: Package information.

IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. In the event of any conflict between the provisions of this document and the provisions of any contractual arrangement in force between the purchasers and ST, the provisions of such contractual arrangement shall prevail. The purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. The purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of the purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. If the purchasers identify an ST product that meets their functional and performance requirements but that is not designated for the purchasers' market segment, the purchasers shall contact ST for more information. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2026 STMicroelectronics – All rights reserved STF35N60DM2 DS11270 - Rev 2 page 12/12