STW34NM60ND STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 22

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities

Applications

■ Switching applications

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package
  2. Pulse width limited by safe operating area
  3. I SD ≤ 29 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS,VDSPeak < V(BR)DSS

Table 3. Thermal data

  1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On/off states Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capac itance giving the same charging time as C oss when VDS

Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 and Figure 5. Thermal impedance for TO-220 and Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

0.102 VGS=10V

3 Test circuits

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 8. D²PAK (TO-263) mechanical data

Table 9. TO-220FP mechanical data

Figure 26. TO-220FP drawing

Table 10. TO-220 type A mechanical data

Figure 27. TO-220 type A drawing

Table 11. TO-247 mechanical data

Figure 28. TO-247 drawing

5 Packaging mechanical data

Table 12. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 13. Document revision history 04-Nov-2010 1 Initial release. ratings and Table 3: Thermal data. Updated Section 4: Package mechanical data. Added Section 5: Packaging mechanical data. 29-Dec-2011 4 Updated description in cover page. Updated title on the cover page. Updated figures 10, 11, 16 and 17. Updated Section 4: Package mechanical data.