Datasheet - STF34N65M5 - N‑channel 650 V, 90 mΩ typ., 28 A MDmesh M5 Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics curves
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF34N65M5 650 V 110 mΩ 28 A
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Extremely low RDS(on)
- 100% avalanche tested
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. TO-220FP 1 2 3 AM01475v1_noTAB D(2) G(1) S(3) Product status link STF34N65M5 Product summary Order code STF34N65M5 Marking 34N65M5 Package TO-220FP Packing Tube N‑channel 650 V, 90 mΩ typ., 28 A MDmesh M5 Power MOSFET in a TO-220FP package STF34N65M5 Datasheet DS10124 - Rev 2 - November 2025 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated
- Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics curves
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
Figure 13. Typical switching energy vs gate resistance Note: Eon including reverse recovery of a SiC diode.
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 20. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data DS10124 - Rev 2 page 10/13
Revision history
Table 9. Document revision history Part numbers previously included in datasheet DocID022853. Removed order code STFI34N65M5. Updated Section 4: Package information.
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