STP32N65M5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 22

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ Worldwide best RDS(on)* area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested

Applications

■ Switching applications

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram

  1. Limited only by maximum temperature allowed

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited only by maximu m temperature allowed
  2. Pulse width limited by safe operating area
  3. I SD ≤ 24 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
  2. C oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

3 Test circuits

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test Figure 23. Unclamped inductive wavefor m Figure 24. Switching time waveform

Package mechanical data STB/F/I/P/W32N65M5 10/22 Doc ID 15316 Rev 4

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. D²PAK (TO-263) mechanical data

Figure 27. TO-220FP drawing Table 9. TO-220FP mechanical data

Figure 28. I²PAK (TO-262) drawing Table 10. I²PAK (TO-262) mechanical data

Table 11. TO-220 type A mechanical data

Figure 29. TO-220 type A drawing

Table 12. TO-247 mechanical data

Figure 30. TO-247 drawing

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 14. Document revision history 01-Sep-2009 2 Document status promoted from preliminary data to datasheet.