STF30H150C SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 150 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 200 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @7.5A,Pulse,TJ =25C @15A,Pulse,TJ =25C 0.71 0.85 1.36 V VF2 @7.5A,Pulse,TJ =125C @15A,Pulse,TJ =125C 0.60 0.71 0.79 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25C 0.2 200 μA IR2 @VR =ratedVR,TJ =125C 0.33 20 mA JunctionCapacitance(PerLeg) CT @VR =5V,TC =25C,fSIG =1MHz 485 - pF RSMIsolationVoltage(t=1.0second, R.H.<=30%,TA=25C) VISO Clipmounting, theepoxybodyaway fromtheheatsinkedgebymorethan 0.110"alongtheleaddirection - 4500 VClipmounting,theepoxybodyis insidetheheatsink. - 3500 Screwmounting,theepoxybodyis insidetheheatsink. - 1500  175 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection ITO-220AB

Data Sheet N1785, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STF30H150C Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC DCoperation 4.5 C/W ApproximateWeight wt - 2 g CaseStyle ITO-220AB Thermal-Mechanical Specifications: Ratings and Characteristics Curves

Data Sheet N1785, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STF30H150C Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Mechanical Dimensions ITO-220AB SYMBOL Millimeters MIN. TYP. MAX. A 4.30 4.50 4.70 A1 1.10 1.30 1.50 A2 2.80 3.00 3.20 A3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 b3 1.20 1.30 1.45 b4 1.60 1.70 1.85 c 0.50 0.60 0.75 D 14.80 15.00 15.20 E 9.96 10.16 10.36 e 2.55 e1 5.10 H1 6.50 6.70 6.90 L 12.70 13.20 13.70 L1 1.60 1.80 2.00 L2 0.80 1.00 1.20 L3 0.60 0.80 1.00 ΦP1(上口) 3.30 3.50 3.70 ΦP2(下口) 2.99 3.19 3.39 Q 2.50 2.70 2.90 Θ1 5° Θ2 4° Θ3 10° Θ4 5° Θ5 5° Marking Diagram Tube Specification Ordering Information Device Package Shipping STF30H150C ITO-220AB (Pb-Free) 50pcs/tube WhereXXXXX is YYWWL ST = DeviceType F =Package type 30 =ForwardCurrent (30A) H =Tj175C 150 =Reverse Voltage(150V) C = Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N1785, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STF30H150C DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsalesdepartment forthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing) Co.,Ltdassumesno responsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuits describedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceoranysecondary damageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics(Nanjing) Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..