STF30150C SMCDIODE | Alldatasheet

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Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 150 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse,Tc=25°C 200 A Thermal-Mechanical Specifications:  150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection ITO-220AB ST30150C STF30150CR

Data Sheet N1402, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STF30150C(R) * Pulsewidth<300µs, dutycycle<2% Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @5A,Pulse,TJ =25℃ @7.5A,Pulse,TJ=25℃ @15A,Pulse,TJ=25℃ 0.66 0.79 1.16 1.36 V VF2 @5A,Pulse,TJ =125℃ @7.5A,Pulse,TJ=125℃ @15A,Pulse,TJ=125℃ 0.56 0.62 0.74 0.79 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25℃ 0.006 0.2 mA IR2 @VR =ratedVR, TJ =125℃ 2.6 20 mA JunctionCapacitance CT @VR =5V,TC =25C,fSIG =1MHz 485 - pF RSMIsolationVoltage (t=1.0second,R.H.<=30%, TA =25C) VISO Clipmounting, theepoxybodyaway fromtheheatsinkedgebymorethan 0.110"alongtheleaddirection. - 4500 VClipmounting,theepoxybodyis insidetheheatsink. - 3500 Screwmounting,theepoxybodyis insidetheheatsink. - 1500 Ratings and Characteristics Curves

Data Sheet N1402, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STF30150C(R) Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Mechanical Dimensions ITO-220AB SYMBOL Millimeters MIN. TYP. MAX. A 4.30 4.50 4.70 A1 1.10 1.30 1.50 A2 2.80 3.00 3.20 A3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 b3 1.20 1.30 1.45 b4 1.60 1.70 1.85 c 0.50 0.60 0.75 D 14.80 15.00 15.20 E 9.96 10.16 10.36 e 2.55 e1 5.10 H1 6.50 6.70 6.90 L 12.70 13.20 13.70 L1 1.60 1.80 2.00 L2 0.80 1.00 1.20 L3 0.60 0.80 1.00 ΦP1(上口) 3.30 3.50 3.70 ΦP2(下口) 2.99 3.19 3.39 Q 2.50 2.70 2.90 Θ1 5° Θ2 4° Θ3 10° Θ4 5° Θ5 5° Marking Diagram Tube Specification Ordering Information Device Package Shipping ST30150C(R) ITO-220AB (Pb-Free) 50pcs/tube WhereXXXXX isYYWWL ST = DeviceType F =Packagetype 30 =ForwardCurrent(30A) 150 =ReverseVoltage(150V) C(R) =Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resin UL:94V-0

Data Sheet N1402, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com STF30150C(R) DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovided toanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..