ST30100C SMCDIODE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C ST30100C/STB30100C/STF30100C SCHOTTKY RECTIFIER Applications Features ST30100C STB30100C STF30100C TO-220AB D2PAK ITO-220AB Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 100 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 200 A  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol ST30100C STB30100C STF30100C Units JunctionTemperature TJ -55to+150 C StorageTemperature Tstg -55to+150 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC 2.8 2.8 5.5 C/W Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @5A,Pulse,TJ =25C @7.5A, Pulse,TJ =25C @15A,Pulse,TJ =25C 0.50 0.61 0.70 0.75 V VF2 @5A,Pulse,TJ =125C @7.5A, Pulse,TJ =125C @15A,Pulse,TJ =125C 0.46 0.53 0.66 0.68 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR TJ =25C 0.023 0.5 mA IR2 @VR =ratedVR TJ =125C 3.19 55 mA JunctionCapacitance(PerLeg) CT @VR =5V,TC =25C fSIG =1MHz 686 - pF Thermal-Mechanical Specifications: Tube Specification Tube Specification(TO-220AB/ITO-220AB) Device Package Weight Shipping ST30100C TO-220AB 2.0 50pcs/tube STB30100C D²PAK 1.85 800pcs/reel STF30100C ITO-220AB 2.0 50pcs/tube

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C Ratings and Characteristics Curves

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C Marking Diagram Carrier Tape Specification D2PAK SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 WhereXXXXX isYYWWL ST = DeviceType B/F = Packagetype 30 =ForwardCurrent (30A) 100 =ReverseVoltage(100V) C = Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C Mechanical Dimensions TO-220AB Symbol Dimensions in millimeters Min Typical Max A 4.42 4.57 4.72 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.94 15.24 15.54 D1 8.85 9.00 9.15 E 10.01 10.16 10.31 e 2.54 e1 4.98 5.06 5.18 H1 6.04 6.24 6.44 L 12.7 13.56 13.80 L1 3.56 3.5 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 7° Θ2 3° Θ3 4° Mechanical Dimensions D2PAK Symbol Dimensions in millimeters Min. Typical Max. A 4.55 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 D 8.55 8.70 8.85 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.18 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.70 L1 1.17 1.27 1.40 L2 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4°

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C Mechanical Dimensions ITO-220AB Symbol Dimensions in millimeters Min. Typical Max. A 4.30 4.50 4.70 A1 1.10 1.30 1.50 A2 2.80 3.00 3.20 A3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 b3 1.20 1.30 1.45 b4 1.60 1.70 1.85 c 0.50 0.60 0.75 D 14.80 15.00 15.20 E 9.96 10.16 10.36 e 2.55 e1 5.10 H1 6.50 6.70 6.90 L 12.70 13.20 13.70 L1 1.60 1.80 2.00 L2 0.80 1.00 1.20 L3 0.60 0.80 1.00 ΦP1(上口) 3.30 3.50 3.70 ΦP2(下口) 2.99 3.19 3.39 Q 2.50 2.70 2.90 Θ1 5° Θ2 4° Θ3 10° Θ4 5° Θ5 5°

Data Sheet N1047, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com ST30100C STB30100C STF30100C DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..