DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 4.1 TO-220FP package information
- 4.2 I²PAKFP (TO-281) package information
- 5 Revision history
Features
Order code VDS@TJmax RDS(on)max. ID STF15N60M2-EP 650 V 0.378 Ω 11 A STFI15N60M2-EP Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected
Applications
Switching applications Tailored for very high frequency converters (f > 150 kHz)
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching loss, rendering them suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STF15N60M2-EP 15N60M2EP TO-220FP Tube STFI15N60M2-EP I²PAKFP (TO-281) TO-220FP I2PAKFP (TO-281) D(2) G(1) S(3) AM01476v1
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID (1) Drain current (continuous) at TC = 25 °C 11 A ID (1) Drain current (continuous) at TC = 100 °C 7 A IDM (2) Drain current (pulsed) 44 A PTOT Total dissipation at TC = 25 °C 25 W dv/dt(3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s,TC = 25 °C) 2500 V Tstg Storage temperature - 55 to 150 °C Tj Operating junction temperature Notes: (1)Limited by maximum junction temperature. (2)Pulse width limited by safe operating area. (3)ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. (4)VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 2.8 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 125 mJ
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 5.5 A 0.340 0.378 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V,f = 1 MHz, VGS = 0 V - 590 - pF Coss Output capacitance - 30 - pF Crss Reverse transfer capacitance - 1.1 - pF Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 148 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 7 - Ω Qg Total gate charge VDD = 480 V, ID = 11 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 17 - nC Qgs Gate-source charge - 3.1 - nC Qgd Gate-drain charge - 7.3 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching energy Symbol Parameter Test conditions Min. Typ. Max. Unit E(off) Turn-off energy (from 90% VGS to 0% ID) VDD = 400 V, ID = 1.5 A RG = 4.7 Ω, VGS = 10 V - 4.7 - µJ VDD = 400 V, ID = 3.5 A RG = 4.7 Ω, VGS = 10 V - 5.2 - µJ
Table 8: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 5.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform" ) - 11 - ns tr Rise time - 10 - ns td(off) Turn-off-delay time - 40 - ns tf Fall time - 15 - ns Table 9: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD (1) Source-drain current 11 A ISDM (2) Source-drain current (pulsed) 44 A VSD (3) Forward on voltage VGS = 0 V, I = 11 A - 1.6 V trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: " Test circuit for inductive load switching and diode recovery times" ) - 280 ns Qrr Reverse recovery charge - 2.7 µC IRRM Reverse recovery current - 19.5 A trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 400 ns Qrr Reverse recovery charge - 3.8 µC IRRM Reverse recovery current - 19 A Notes: (1)Limited by maximum junction temperature. (2)Pulse width is limited by safe operating area. (3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs temperature Figure 7: Normalized V(BR)DSS vs temperature GIPG200120151046MTID 0.1 0.1 1 VDS(V)10 (A) Operation in this area is Limited by max R DS(on) 10µs 1ms 100µs 0.01 Tj=150°C Tc=25°C Single pulse 10ms 100 K 10-4 Tp(s)10-3 10-2 10-1 10010-3 10-2 10-1 GC20940 GIPG121220141416MT ID 0 4 VDS(V)8 (A) VGS=7, 8, 9, 10V GIPG121220141419MT ID 0 4 VGS(V)8 (A) 2 6 VDS=17V 0.9 0.8 0.7 0.6 -75 -25 TJ(°C) 1.0 25 75 125 ID = 250 µA 1.1 VGS(th) (norm) GIPG181120141615ALS GIPG191120141457ALS -75 TJ(°C)-25 7525 125 0.88 0.92 0.96 1.04 1.00 1.08 ID = 1mA V(BR)DSS (norm)
Test circuits STF15N60M2-EP, STFI15N60M2-EP
3 Test circuits
Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG V(BR)DSS VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in d ifferent grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP package information
Figure 20: TO-220FP package outline
Table 10: TO-220FP mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
4.2 I²PAKFP (TO-281) package information
Figure 21: I²PAKFP (TO-281) package outline 8291506 Re v. C
Table 11: I²PAKFP (TO-281) mechanical data Dim. mm Min. Typ. Max. A 4.40 - 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 1.20 G 4.95 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.50 7.60 7.70
5 Revision history
Table 12: Document revision history Date Revision Changes 26-Jan-2015 1 First release.