STF1560C SMCDIODE | Alldatasheet
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Circuit Diagram Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 60 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 7.5(PerLeg) A15(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse,Tc=25°C 130 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @3A,Pulse,TJ =25C @7.5A,Pulse,TJ =25C 0.47 0.56 0.65 V VF2 @3A,Pulse,TJ =125C @7.5A,Pulse,TJ =125C 0.38 0.51 0.63 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25C - 3.5 mA IR2 @VR =ratedVR,TJ =125C - 27 mA RSMIsolationVoltage (t=1.0second,R.H.<=30%, TA =25C) VISO Clipmounting, theepoxybodyaway fromtheheatsinkedgebymorethan 0.110"alongtheleaddirection. - 4500 VClipmounting,theepoxybodyis insidetheheatsink. - 3500 Screwmounting,theepoxybodyis insidetheheatsink. - 1500 150 °C TJ operation Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Trench MOS Schottky technology This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection ITO-220AB STF1560C STF1560CR
Data Sheet N1419, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com STF1560C(R) Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case(PerLeg) RJC DCoperation 6.5 C/W ApproximateWeight wt - 2 g CaseStyle ITO-220AB Thermal-Mechanical Specifications: Mechanical Dimensions ITO-220AB SYMBOL Millimeters MIN. TYP. MAX. A 4.30 4.50 4.70 A1 1.10 1.30 1.50 A2 2.80 3.00 3.20 A3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 b3 1.20 1.30 1.45 b4 1.60 1.70 1.85 c 0.50 0.60 0.75 D 14.80 15.00 15.20 E 9.96 10.16 10.36 e 2.55 e1 5.10 H1 6.50 6.70 6.90 L 12.70 13.20 13.70 L1 1.60 1.80 2.00 L2 0.80 1.00 1.20 L3 0.60 0.80 1.00 ΦP1(上口) 3.30 3.50 3.70 ΦP2(下口) 2.99 3.19 3.39 Q 2.50 2.70 2.90 Θ1 5° Θ2 4° Θ3 10° Θ4 5° Θ5 5° Marking Diagram WhereXXXXX is YYWWL ST = DeviceType F =Package type 15 =ForwardCurrent (15A) 60 =Reverse Voltage(60V) C(R) = Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0
Data Sheet N1419, Rev. A China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com STF1560C(R) Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Tube Specification Ordering Information Device Package Shipping STF1560C(R) ITO-220AB (Pb-Free) 50pcs/tube DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing) Co.,Ltdsalesdepartmentfor thelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment,medical equipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorbymeansofusers’ fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentoranyother causeduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltdassumesno responsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuits describedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceoranysecondary damageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics(Nanjing)Co., Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..