STF140N8F7 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 4.1 TO-220FP package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STF140N8F7 80 V 4.3 mΩ 64 A 35 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STF140N8F7 140N8F7 TO-220FP Tube TO-220FP
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 64 (1) A ID Drain current (continuous) at TC = 100 °C 45(1) A IDM(2) Drain current (pulsed) 256 A PTOT Total dissipation at TC = 25 °C 35 W EAS(3) Single pulse avalanche energy 515 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV Tj Operating junction temperature -55 to 175 °C Tstg Storage temperature Notes: (1)Limited by package. (2)Pulse width is limited by safe operating area. (3)Starting Tj =25 °C, Id = 18.5 A, Vdd = 50 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 4.29 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 250 µA 80 V IDSS Zero gate voltage Drain current VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TJ=125 °C 10 µA IGSS Gate-source leakage current VDS = 0, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 32 A 3.5 4.3 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 40 V, f = 1 MHz - 6340 - pF Coss Output capacitance - 1195 - pF Crss Reverse transfer capacitance - 105 - pF Qg Total gate charge VDD = 40 V, ID = 64 A, VGS = 10 V - 96 - nC Qgs Gate-source charge - 30 - nC Qgd Gate-drain charge - 26 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 45 A RG = 4.7 Ω, VGS = 10 V - 26 - ns tr Rise time - 51 - ns td(off) Turn-off-delay time - 82 - ns tf Fall time - 44 - ns Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 64 A ISDM(1) Source-drain current (pulsed) 256 A VSD (2) Forward on voltage VGS = 0, ISD = 64 A - 1.2 V trr Reverse recovery time ISD = 64 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C - 58 ns Qrr Reverse recovery charge - 92 nC IRRM Reverse recovery current - 3.2 A Notes: (1)Pulse width is limited by safe operating area (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V(BR)DSS vs. temperature Figure 7: Static drain-source on resistance ID 100 0.1 0.1 1 VDS(V)10 (A) Operation in this area is Limited by max RDS(on) 100µs 1ms 10ms Tj=175°C Tc=25°C Sinlge pulse K tp(s) Single pulse 10-2 δ= 0.5 0.2 0.1 0.05 0.02 0.01 10-3 10-210-310-410-510-610-7 10-1 10-1 ID 0 2 VDS(V)4 (A) 6 8 100 150 200 VGS= 10V 250 300 GIPD130920130919MT ID 0 2 VGS(V)4 (A) VDS= 2V 6 8 100 150 200 1 3 5 7 300 250 V(BR)DSS 0.98 0.96 0.94 -75 TJ(°C)25 0 75 125-25 175 ID= 250µA 1.02 1.04 RDS(on) 3.50 3.49 3.48 3.47
10 ID(A)
VGS= 10V 3.51 20 30 40 50 60 3.52
0.6
20 ID(A)50
TJ= -55°C 30 70 80 90 0.7 0.8 0.9 1.1 TJ= 25°C TJ= 175°C Figure 8: Gate charge vs. gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on resistance vs. temperature Figure 12: Source-drain diode forward characteristics VGS 0 40 Qg(nC)80 (V) 20 60 100 C 3000 2000 1000 0 20 VDS(V)40 (pF) Ciss 4000 10 30 50 Coss Crss 60 70 5000 6000 7000 8000 VGS(th) 0.8 0.6 0.4 -75 TJ(°C)25 1.2 0 75 125-25 175 ID= 250µA RDS(on) 0.8 0.6 0.4 -75 TJ(°C)25 1.8 0 75 125-25 175 VGS= 10V 1.2 1.4 1.6
3 Test circuits
Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP package information
Figure 19: TO-220FP package outline
Table 8: TO-220FP mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
5 Revision history
Table 9: Document revision history Date Revision Changes 18-Sep-2013 1 First release. 22-Aug-2014 2 The part numbers STH140N8F7-2 and STP140N8F7 have been moved to a separate datasheet. Modified: not found Minor text changes 10-Oct-2014 3 Updated Figure 3: "Thermal impedance"