Datasheet - STF13NM60N - N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF13NM60N 600 V 360 mΩ 11 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 AM01475v1_noZen_noTab D(2) G(1) S(3) Product status link STF13NM60N Product summary Order code STF13NM60N Marking 13NM60N Package TO-220FP Packing Tube N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package STF13NM60N Datasheet DS14454 - Rev 1 - September 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 3. On/off states
- Specified by design, not tested in production.
Table 4. Dynamic
- Coss eq. is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 V to the stated
Table 5. Switching times Figure 17. Switching time waveform)
Electrical characteristics
Table 6. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Normalized gate threshold vs temperature Figure 6. Typical drain-source on-resistance
Figure 7. Typical gate charge characteristics
0 Q g (nC)
Figure 8. Typical capacitance characteristics Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Typical reverse diode forward characteristics
3 Test circuits
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 18. TO-220FP type B package outline
Package information
Table 7. TO-220FP type B package mechanical data
Revision history
Table 8. Document revision history
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