Datasheet - STF13NK50Z - N‑channel 500 V, 400 mΩ typ., 11 A SuperMESH Power MOSFET in a TO-220FP package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
Features
Order code VDS RDS(on) max. ID STF13NK50Z 500 V 480 mΩ 11 A
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Zener-protected
Applications
- Switching applications
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well‑established PowerMESH. In addition to a significant reduction in on‑resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF13NK50Z Product summary Order code STF13NK50Z Marking F13NK50Z Package TO-220FP Packing Tube N‑channel 500 V, 400 mΩ typ., 11 A SuperMESH Power MOSFET in a TO-220FP package STF13NK50Z Datasheet DS5422 - Rev 3 - February 2026 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 19. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data
Revision history
Table 9. Document revision history 07-Aug-2007 1 First release. 19-Mar-2009 2 Update ID value test condition in Table 6. Removed order code STP13NK50Z and STW13NK50Z. Updated Section 4: Package information.
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