Datasheet - STF13N60DM2 - N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP package information

AM15572v1_no_tab D(2) G(1) S(3) Order codes VDS RDS(on) max. ID STF13N60DM2 600 V 0.365 Ω 11 A

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

  • Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STF13N60DM2 Product summary Order code STF13N60DM2 Marking 13N60DM2 Package TO-220FP Packing Tube N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package STF13N60DM2 Datasheet DS11595 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified) Table 4. Static

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 8. Gate-source Zener diode The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. additional external componentry.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STF13N60DM2

Package information

4.1 TO-220FP package information

Figure 19. TO-220FP package outline

Table 9. TO-220FP package mechanical data

Revision history

Table 10. Document revision history 08-Apr-2016 1 First release. 07-Dec-2016 2 Document status promoted from preliminary to production data. Modified Figure 1. Safe operating area.