STF12NM50ND VBSEMI | Alldatasheet

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FEATURES

  • O p t im a l D e s i g n - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switchin g Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): R on x Qg - Fast Switching APPLICATIO NS
  • Consumer Electronics - Disp lays (LCD or Plasma TV)
  • Server and Telecom Power Supplies - SMPS
  • Industrial - Welding - Induction Heating - Motor Drives
  • Battery Chargers
  • S M P S - Power Factor Correction (PFC) Notes a. Repetitive rating; pulse wi dth limited by maximum junction temperature. b. V DD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A. c. 1.6 mm fr om case. d. I SD  ID, starti ng TJ = 25 °C. PRODUCT SUMMARY VDS (V) 550 RDS(on) max. at 25 °C ()V GS = 10 V 0.30 Qg max. (nC) 150 Qgs (nC) 12 Qgd (nC) 25 Configuratio n Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unles s otherwise noted) PARAMETER SYMBOL LIMIT UNIT Dr ain-Source Voltage VDS 550 V Gate-Sourc e Voltage VGS ± 20 Gate-Sou rce Voltage AC (f > 1 Hz) 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID ATC = 100 °C 11 Pulsed Drai n Currenta IDM 56 Linear Derating Factor 2.2 W/° C Single Pulse Avalanche Energyb EAS 281 mJ Maximum Po wer Dissipation PD 60 W Operating Juncti on and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Drain- Source Voltage Slope TJ = 125 °C dV/dt 24 V/nsReverse Diode dV/dtd 0.36 Soldering Recommendations (Peak Temperature) for 10 s 300c °C Power MOSFET G D S TO-220 FULLPAK Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. b. C oss(tr) is a fixe d capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RA TINGS PARAMETER S YMBO L TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -4 0 °C/WMaximu m Junction-to-Case (Drain) RthJC -0 .45 SPECIFICATIONS (TJ = 25 °C , unless otherwise noted) PARAMETER SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Br eakdown Voltage VDS VGS = 0 V, ID = 250 μA 550 - - V VDS Temper ature Coefficient VDS/TJ Reference to 25 °C, ID = 250 μA -0 . 5 6 - V/ Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS V GS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 1 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 D rain-Source On-State Resistance RDS(on) V GS = 10 V ID = 10 A - - 0.30  Forward Trans conductance gfs VDS = 50 V, ID = 10 A - 12 - S Dynamic Input Ca pacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 3094 - pF Output Capacitance Coss - 152 - Revers e Transfer Capacitance Crss -1 3- Effe ctive output capacitance, energy relateda Co(er) VGS = 0 V, VDS = 0 V to 400 V - 131 - Effe ctive output capacitance, time relatedb Co(tr) - 189 - Total Gate Charge Qg VGS = 10 V I D = 10 A, VDS = 400 V - 80 150 nC Gate-Sourc e Charge Qgs - Gate-Drain Charge Qgd - Turn-On De lay Time td(on) VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1  -2 4 5 0 nsRise Time tr -3 1 6 2 Turn -Off Delay Time td(off) - 117 176 Fall Ti me tf - 56 112 Gate Input Resistance Rg f = 1 MHz, open drain - 1.8 -  Drain-So urce Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 2 0 A Pulsed Diode Forward Current ISM -- 80 Diod e Forward Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.2 V Re verse Recovery Time trr TJ = 25 °C, IF = IS = 10 A, dI/dt = 100 A/μs, VR = 20 V - 437 - ns Rever se Recovery Charge Qrr -5 . 9- μ C Reverse Recovery Current IRRM -2 5-A S D G 12 - 25 - E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

ERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical O utput Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 11 V VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 30 TJ = 25 °C TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V BOTTOM 5 V 11 V VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 30 TJ = 150 °C TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V BOTTOM 5 V VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 TJ = 25 °C TJ = 150 °C TJ, Junction Temperature (°C) RDS(on), Drain-to-Source - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 On Resistance (Normalized) 0.5 1.5 2.5 VGS = 10 V ID = 10 A ġ ġ ġ ġ ġ VDS, Drain-to-Source Voltage (V) Capacitance (pF) Ciss Coss Crss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 100 1000 0 100 200 300 400 500 10 000 Qg, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 03 0 6 0 9 0 120 150 180 VDS = 400 V VDS = 250 V VDS = 100 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

Fig. 7 - Ty pical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10 - Temperature vs. Drain-to-Source Voltage Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case 0.1 100 VSD, Source-Drain Voltage (V) ISD, Reverse Drain Current (A) 1.2 1.4 1.6 ġ ġ ġVGS = 0 V TJ = 25 °C TJ = 150 °C VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 0.1 100 1000 1 10 100 1000 * VGS > minimum VGS at which RDS(on) is specified Operation in this area limited by RDS(on) BVDSS Limited TC = 25 °C TJ = 150 °C Single Pulse 100 μs 1 ms 10 ms Limited by RDS(on)* TJ, Case Temperature (°C) ID, Drain Current (A) 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain-to-Source - 60 0 160 Brakdown Voltage (V) - 40 - 20 20 40 60 80 100 120 140 475 500 525 550 575 600 625 0.01 0.1 0.0001 0.001 0.01 0.1 1 Normalized Effective Transient Thermal Impedance Pulse Time (s) Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

Fig. 12 - Switching Time Test Circuit Fig. 13 - Switching Time Waveforms Fig. 14 - Unclamped Inductive Test Circuit Fig. 15 - Unclamped Inductive Waveforms Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

Fig. 18 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These di mensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. No chipping or package damage. E b n L e Ø P D c u V A MILLIMETERS INCHES DIM. MIN. MAX . MIN. MAX. A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STF12NM50ND A ll data sheet.ocm