STF12NK65Z STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Very good manufacturing repeatability Application Switching applications

Description

This N-channel SuperMESH™ Power MOSFET is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On/off states Table 6. Dynamic

  1. Pulsed: pulse duration=300µs, duty cycle 1.5%
  2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7. Source drain diode

  1. Pulsed: pulse duration=300µs, duty cycle 1.5%
  2. Pulse width limited by safe operating area

Table 8. Gate-source Zener diode

  1. The built-in back-to-back Zener diodes have specif ically been designed to enhance not only the device’s

usage of external components.

2.1 Electrical characteri stics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test Figure 18. Unclamped inductive wavefor m Figure 19. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Figure 20. TO-220FP drawing Table 9. TO-220FP mechanical data

5 Revision history

Table 10. Document revision history