Datasheet - STF12N65M2 - N‑channel 650 V, 420 mΩ typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information

Features

Order code VDS RDS(on) max. ID STF12N65M2 650 V 500 mΩ 8 A

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • Very low turn-off switching losses
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 D(2) G(1) S(3) AM01476v1 Product status link STF12N65M2 Product summary Order code STF12N65M2 Marking 12N65M2 Package TO-220FP Packing Tube N‑channel 650 V, 420 mΩ typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package STF12N65M2 Datasheet DS10788 - Rev 4 - April 2026 For further information, contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 4. On/off states

  1. Specified by design, not tested in production.

Table 5. Dynamic

  1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

Figure 7. Typical capacitance characteristics Figure 8. Typical output capacitance stored energy Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized breakdown voltage vs temperature

1.08 ID = 1mA

Figure 12. Typical reverse diode forward characteristics

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 19. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

Revision history

Table 9. Document revision history 16-Dec-2014 1 First release. Updated features in cover page. "Electrical characteristics (curves)". Updated Section 4: Package information.

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