STD10P6F6_V01 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 24

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 DPAK package information
  • 4.2 DPAK packing information
  • 4.3 TO-220FP package information
  • 4.4 TO-220 package information
  • 4.5 IPAK package information
  • 5 Revision history

Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

  • Switching applications

Description

These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low R DS(on) in all packages. , TAB AM11258v1 DPAK TAB TAB TO-220 TAB IPAK TO-220FP Order codes V DS RDS(on) max I D STD10P6F6 -60 V 0.16 Ω -10 A STF10P6F6 STP10P6F6 STU10P6F6 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area

Table 3. Thermal data

  1. When mounted on 1 inch 2 FR-4, 2 Oz copper board

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4. Static Table 5. Dynamic Table 6. Switching on/off (inductive load)

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Note: For the P-channel Power MOSFET, current and voltage polarities are reversed. Figure 2. Safe operating area for DPAK, TO-220 Figure 3. Thermal impedance DPAK, TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Normalized V (BR)DSS vs temperature

1.15 ID = 1mA

Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs

Figure 14. Source-drain diode forward

3 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit Figure 17. Test circuit for diode recovery

4 Package information

specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 DPAK package information

Figure 18. DPAK (TO-252) type C package outline

Table 8. DPAK (TO-252) type C package mechanical data

Figure 19. DPAK (TO-252) footprint (a)

4.2 DPAK packing information

Figure 20. Tape for DPAK (TO-252)

Figure 21. Reel for DPAK (TO-252) Table 9. DPAK (TO-252) tape and reel mechanical data

4.3 TO-220FP package information

Figure 22. TO-220FP package outline

Table 10. TO-220FP mechanical data

4.4 TO-220 package information

Figure 23. TO-220 type A package outline

Table 11. TO-220 type A mechanical data

4.5 IPAK package information

Figure 24. IPAK (TO-251) type A package outline

Table 12. IPAK (TO-251) type A mechanical data

Figure 25. IPAK (TO-251) type C package outline

Table 13. IPAK (TO-251) type C mechanical data

5 Revision history

Table 14. Document revision history 10-May-2012 1 First release. 20-Jun-2012 2 Updated title on the cover page. Updated all parameter values in Table 5, Table 6 and Figure 1.