STF10N80K5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Electrical characteristics (curves)
  • 4 Test circuits
  • 5 Package mechanical data
  • 6 Revision history

Features

  • Industry’s best RDS(on)
  • Industry’s best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on- resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220FP D(2) G(1) S(3) AM01476v1 Order code V DS RDS(on) max I D PTOT STF10N80K5 800 V 0.600 Ω 9 A 30 W Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.
  3. I SD ≤ 9 A, di/dt ≤ 100 A/µs, VDS(Peak) ≤ V(BR)DSS

Table 3. Thermal data

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4. On/off states Table 5. Dynamic

  1. “Time related” is defined as a constant equival ent capacitance giving the same charging time as Coss when
  2. “Energy related” is defined as a constant equival ent capacitance giving the same stored energy as C oss

need for external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

3 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs. gate-source voltage Figure 7. Static drain-source on-resistance

Figure 14. Output capacitance stored energy

4 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit

5 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 19. TO-220FP drawing

Table 9. TO-220FP mechanical data

6 Revision history

Table 10. Document revision history 23-Jun-2014 1 Initial release. – Inserted Section 3: Electrical characteristics (curves). 17-Set-2014 3 Updated title, features and description in cover page.