STEW05CFN SECOS | Alldatasheet
Document overview
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Technical content
Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente 27-Jun-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com Any changes of specification will not be informed individually. A B F G J H K ED D CL RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to 2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in application where the board space is a premium, in our WBFBP-03D package version.
FEATURES
/circle6 IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance /circle6 Low Leakage Current, Maximum of 0.5 µA at rated voltage /circle6 Maximum Capacitance of 10pF per device at 0Vdc 1MHz /circle6 Peak Power Dissipation of 20W 8/20 µs Waveform /circle6 Pin to pin compatible with standard WBFBP-03D /circle6 In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA /circle6 Case:WBFBP-03D,Molded Plastic /circle6 Terminals: Solderable per MIL-STD-750, Method 2026 MARKING:
PACKAGE INFORMATION
(T A=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Peak Pulse Power (8/20µs Waveform) PPP 20 W Peak Pulse Current (8/20 µs Waveform) IPPM 2 A ESD Voltage (HBM Per MIL STD883C-Method 3015-6) VESD 20 kV Operating Temperature Range TJ -55 ~ 125 ° C Storage temperature Range TSTG -55 ~ 150 ° C WBFBP-03D REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.950 1.050 G - 0. 050 B 0.950 1.050 H 0. 510 0. 610 C 0. 010 0. 07 0 J 0.2 50 0.35 0 D 0.210 0.310 K - 0.050 E 0.350 REF. L 0.450 0.550 F 0.680 REF. AF
Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente 27-Jun-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Working Peak Reverse Voltage V RWM - - 5.0 V Reverse Breakdown Voltage V BR 6.2 - 7.2 V I BR =1mA Reverse Leakage Current I R - - 0.5 µA V R =5V Clamping Voltage (8/20 µs) V C - - 10 V I PP =2A Typical Junction Capacitance 1 C J - 9 10 pF 0Vdc Bias f=1Mhz between pin 1,2 to 3 (Gnd) Note: 1. Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration. CHARACTERISTIC CURVES