STE50DE100 STMICROELECTRONICS | Alldatasheet

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Table 3: Absolute Maximum Ratings Table 4: Thermal Data Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol Parameter Value Unit VCS(SS) Collector-Source Voltage (VBS = VGS = 0 V) 1000 V VBS(OS) Base-Source Voltage (IC= 0, VGS = 0 V) 40 V VSB(OS) Source-Base Voltage (IC= 0, VGS = 0 V) 12 V VGS Gate-Source Voltage ± 20 V IC Collector Current 50 A ICM Collector Peak Current (tp < 5ms) 150 A IB Base Current 10 A IBM Base Peak Current (tp < 1ms) 50 A Ptot Total Dissipation at TC ≤ 25 oC 160 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C VISO Insulation Withstand Voltage (AC-RMS) from All Four Leads to External Heatsink 2500 V Rthj-case Rthc-h Thermal Resistance Junction-Case Max Thermal Resistance Case-heatsink with Conductive Grease Applied Max 0.78 0.05 oC/W oC/W Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-Source Current (VBS = VGS = 0 V) VCS(SS) = 1000 V 100 mA IBS(OS) Base-Source Current (IC = 0 , VGS = 0 V) VBS(OS) = 40 V 10 mA ISB(OS) Source-Base Current (IC = 0 , VGS = 0 V) VSB(OS) = 10 V 100 mA IGS(OS) Gate-Source Leakage V GS = ± 20 V 500 nA VCS(ON) Collector-Source ON Voltage IC = 50 A IB = 10 A VGS = 10 V IC = 30 A IB = 3 A VGS = 10 V (see figure 14) 1.3 1.1 V V hFE DC Current Gain I C = 50 A VCS = 1 V VGS = 10 V IC = 30 A VCS = 1 V VGS = 10 V VBS(ON) Base-Source ON Voltage I C = 50 A IB = 10 A VGS = 10 V IC = 30 A IB = 3 A VGS = 10 V 2.2 1.4 V V VGS(th) Gate Threshold Voltage V BS = VGS IB = 250 mA3 3 . 7 4 . 5 V Ciss Input Capacitance V CS = 25 V f = 1MHZ VGS = VCB = 0 2500 pF QGS(tot) Gate-Source Charge V CS = 25 V VGS = 10 V VCB = 0 IC = 50 A 60 nC

VGS = 10 V VClamp = 800 V RG = 47 W tp = 4 ms IC = 25 A IB = 5 A (see figure 15) 0.65 ms ns ts tf INDUCTIVE LOAD Storage Time Fall Time VGS = 10 V VClamp = 800 V RG = 47 W tp = 4 ms IC = 25 A IB = 2.5 A (see figure 15) 0.43 ms ns VCSW Maximum Collector-Source Voltage without Snubber RG = 47 W hFE = 5 A IC = 35 A 1000 V VCS(dyn) Collector-Source Dynamic Voltage (500 ns) VCC = VClamp = 300 V VGS = 10 V RG = 47 W IB = 5 A IBpeak = IC = 25 A tpeak = 500 ns 5.5 V VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 300 V VGS = 10 V RG = 47 W IB = 5 A IBpeak = IC = 25 A tpeak = 500 ns 4.8 V Symbol Parameter Test Conditions Min. Typ. Max. Unit

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H4 0 . 1 5 7 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N4 0 . 1 5 7 O 7.8 8.2 0.307 0.322 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA

Table 6: Revision History Date Release Change Designator 06-Oct-2004 1 First Release.

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