STE40NA60 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL RDS(on) = 0.12Ω n HIGH CURRENT POWER MODULE n AVALANCHE RUGGED TECHNOLOGY n VERY LARGE SOA - LARGE PEAK POWER CAPABILITY n EASY TO MOUNT n SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS n EXTREMELY LOW Rth (Junction to case) n VERY LOW INTERNAL PARASITIC INDUCTANCE n ISOLATED PACKAGE UL RECOGNIZED

APPLICATIONS

n SMPS & UPS n MOTOR CONTROL n WELDING EQUIPMENT n OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 6 0 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 600 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC4 0 A ID Drain Current (continuous) at Tc =1 0 0oC2 6 A IDM (•) Drain Current (pulsed) 160 A P tot Total Dissipation at Tc =2 5 oC4 6 0 W Derating Factor 3.6 W/ oC Tst g Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC V ISO Insulation Withhstand Voltage (AC-RMS) 2500 V (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STE40NA60 600 V < 0.135 Ω 40 A January 1998 ISOTOP

Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.27 0.05 oC/W oC/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 20 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =5 0 0µ AV GS =0 900 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =0.8x Max Rating T c = 125 oC 250 1000 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 200 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS ID =1 m A 2 . 2 5 3 3 . 7 5 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID = 20 A 0.12 0.135 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 40 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =2 0A 2 0 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1 . 0M H z V GS = 0 13000 1500 350 16000 1700 450 pF pF pF STE40NA60

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0 0V I D =2 0A R G =4 . 7 Ω VGS =1 0V 125 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =4 8 0V I D =4 0A V GS = 10 V 460 217 600 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 8 0V I D =4 0A R G =4 . 7 Ω V GS =1 0V 140 125 180 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 160 A A V SD (∗) Forward On Voltage I SD =4 0A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A di/dt = 100 A/µ s V R =1 0 0V T j =1 5 0oC 1050 31.5 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STE40NA60

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 0.157 O 7.8 8.2 0.307 0.322 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA STE40NA60

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... STE40NA60